Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties / Borblik, V. L., Korchevoi, A. A., Nikolenko, A. S., Strelchuk, V. V., Fonkich, A. M., Shwarts, Yu. M., Shwarts, M. M. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352928
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 3)
Borblik V. L., Korchevoi A. A., Nikolenko A. S., Strelchuk V. V., Fonkich A. M., Shwarts Yu. M., Shwarts M. M.
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
Cite:
Borblik, V. L., Korchevoi, A. A., Nikolenko, A. S., Strelchuk, V. V., Fonkich, A. M., Shwarts, Yu. M., Shwarts, M. M. (2014). Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (3), 237-242. http://jnas.nbuv.gov.ua/article/UJRN-0000352928 | |
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