Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties / Borblik V. L., Korchevoi A. A., Nikolenko A. S., Strelchuk V. V., Fonkich A. M., Shwarts Yu. M., Shwarts M. M. (2014)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000352928
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2014, Vol. 17, № 3)
Borblik V. L., Korchevoi A. A., Nikolenko A. S., Strelchuk V. V., Fonkich A. M., Shwarts Yu. M., Shwarts M. M.
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
Cite:
Borblik, V. L., Korchevoi, A. A., Nikolenko, A. S., Strelchuk, V. V., Fonkich, A. M., Shwarts, Yu. M., Shwarts, M. M. (2014). Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (3), 237-242. http://jnas.nbuv.gov.ua/article/UJRN-0000352928 | |
|
|
PDF