Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Dobrovolskyi, Yu., Pidkamin, L., Brus, V., Kuzenko, V. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352931
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 3)
Dobrovolskyi Yu., Pidkamin L., Brus V., Kuzenko V.
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
Cite:
Dobrovolskyi, Yu., Pidkamin, L., Brus, V., Kuzenko, V. (2014). Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (3), 256-259. http://jnas.nbuv.gov.ua/article/UJRN-0000352931 | |
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