Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy / Rengevych, O. V., Beketov, G. V., Ushenin, Yu. V. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000353047 Semiconductor Physics, Quantum Electronics and Optoelectronics А - 2019 / Issue (2014, Vol. 17, № 4)
Rengevych O. V., Beketov G. V., Ushenin Yu. V. Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy
Cite: Rengevych, O. V., Beketov, G. V., Ushenin, Yu. V. (2014). Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (4), 368-373. http://jnas.nbuv.gov.ua/article/UJRN-0000353047 |
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