Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique / Rozouvan, T. S., Poperenko, L. V., Shaykevich, I. A. (2015)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000353228
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2015, Vol. 18, № 1)
Rozouvan T. S., Poperenko L. V., Shaykevich I. A.
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique
Cite:
Rozouvan, T. S., Poperenko, L. V., Shaykevich, I. A. (2015). Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (1), 26-30. http://jnas.nbuv.gov.ua/article/UJRN-0000353228 | |
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