Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / Gaidar, G. P. (2015)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000353233
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2015, Vol. 18, № 1)

Gaidar G. P.
Changes in electrophysical properties of heavily doped n-Ge single crystals under the influence of thermoannealings

Cite:
Gaidar, G. P. (2015). Changes in electrophysical properties of heavily doped n-Ge single crystals under the influence of thermoannealings. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (1), 53-56. http://jnas.nbuv.gov.ua/article/UJRN-0000353233

 

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