Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films / Vasin, A. V., Ishikawa, Y., Rusavsky, A. V., Nazarov, A. N., Konchitz, A. A., Lysenko, V. S. (2015)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000353235
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2015, Vol. 18, № 1)
Vasin A. V., Ishikawa Y., Rusavsky A. V., Nazarov A. N., Konchitz A. A., Lysenko V. S.
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films
Cite:
Vasin, A. V., Ishikawa, Y., Rusavsky, A. V., Nazarov, A. N., Konchitz, A. A., Lysenko, V. S. (2015). Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (1), 63-70. http://jnas.nbuv.gov.ua/article/UJRN-0000353235 | |
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