Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / Charikova, T., Okulov, V., Gubkin, A., Lugovikh, A., Moiseev, K., Nevedomsky, V., Kudriavtsev, Yu., Gallardo, S., Lopez, M. (2015)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000477082
Low Temperature Physics   А - 2019 /  Issue (2015, Т. 41, № 2)
Charikova T., Okulov V., Gubkin A., Lugovikh A., Moiseev K., Nevedomsky V., Kudriavtsev Yu., Gallardo S., Lopez M.
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
Cite:
Charikova, T., Okulov, V., Gubkin, A., Lugovikh, A., Moiseev, K., Nevedomsky, V., Kudriavtsev, Yu., Gallardo, S., Lopez, M. (2015). Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese. Low Temperature Physics, 41 (2), 207-209. http://jnas.nbuv.gov.ua/article/UJRN-0000477082 | |
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