Metal site doping in the narrow-gap semiconductor FeGa3 / Kotur, B., Babizhetskyy, V., Bauer, E., Kneidinger, F., Danner, A., Leber, L., Michor, H. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000662708
Materials Science (Physicochemical mechanics of materials)   А - 2019 /  Issue (2013, Т. 49, № 2)
Kotur B., Babizhetskyy V., Bauer E., Kneidinger F., Danner A., Leber L., Michor H.
Metal site doping in the narrow-gap semiconductor FeGa3
Cite:
Kotur, B., Babizhetskyy, V., Bauer, E., Kneidinger, F., Danner, A., Leber, L., Michor, H. (2013). Metal site doping in the narrow-gap semiconductor FeGa3. Materials Science (Physicochemical mechanics of materials), 49 (2), 69-75. http://jnas.nbuv.gov.ua/article/UJRN-0000662708 | |
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