The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide / Klepikova, A. S., Arapov, Ju. G., Gudina, S. V., Neverov, V. N., Kharus, G. I., Shelushinina, N. G., Jakunin, M. V., Zvonkov, B. N. (2017)
Ukrainian

English  Low Temperature Physics   /     Issue (2017, 43 (4))

Klepikova A. S., Arapov Ju. G., Gudina S. V., Neverov V. N., Kharus G. I., Shelushinina N. G., Jakunin M. V., Zvonkov B. N.
The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide


Cite:
Klepikova, A. S., Arapov, Ju. G., Gudina, S. V., Neverov, V. N., Kharus, G. I., Shelushinina, N. G., Jakunin, M. V., Zvonkov, B. N. (2017). The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide. Low Temperature Physics, 43 (4), 596-604. http://jnas.nbuv.gov.ua/article/UJRN-0000687585 [In Russian].

 

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