Activation transport under quantum Hall regime in HgTe-based heterostructure / Gudina, S. V., Neverov, V. N., Novik, E. G., Ilchenko, E. V., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A. (2017)
web address of the page https://jnas.nbuv.gov.ua/article/UJRN-0000687586
Low Temperature Physics   А - 2019 /  Issue (2017, Т. 43, № 4)
Gudina S. V., Neverov V. N., Novik E. G., Ilchenko E. V., Harus G. I., Shelushinina N. G., Podgornykh S. M., Yakunin M. V., Mikhailov N. N., Dvoretsky S. A.
Activation transport under quantum Hall regime in HgTe-based heterostructure
Cite:
Gudina, S. V., Neverov, V. N., Novik, E. G., Ilchenko, E. V., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A. (2017). Activation transport under quantum Hall regime in HgTe-based heterostructure. Low Temperature Physics, 43 (4), 605-611. https://jnas.nbuv.gov.ua/article/UJRN-0000687586 | |
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