Activation transport under quantum Hall regime in HgTe-based heterostructure / Gudina, S. V., Neverov, V. N., Novik, E. G., Ilchenko, E. V., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000687586 Low Temperature Physics А - 2019 / Issue (2017, Т. 43, № 4)
Gudina S. V., Neverov V. N., Novik E. G., Ilchenko E. V., Harus G. I., Shelushinina N. G., Podgornykh S. M., Yakunin M. V., Mikhailov N. N., Dvoretsky S. A. Activation transport under quantum Hall regime in HgTe-based heterostructure
Cite: Gudina, S. V., Neverov, V. N., Novik, E. G., Ilchenko, E. V., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A. (2017). Activation transport under quantum Hall regime in HgTe-based heterostructure. Low Temperature Physics, 43 (4), 605-611. http://jnas.nbuv.gov.ua/article/UJRN-0000687586 |
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