Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer / Sachenko, A. V., Kostylev, V. P., Litovchenko, V. G., Popov, V. G., Romanyuk, B. M., Chernenko, V. V., Naseka, V. M., Slusar, T. V., Kyrylova, S. I., Komarov, F. F. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000688686
Ukrainian journal of physics   А - 2018 /  Issue (2013, Vol. 58, № 2)
Sachenko A. V., Kostylev V. P., Litovchenko V. G., Popov V. G., Romanyuk B. M., Chernenko V. V., Naseka V. M., Slusar T. V., Kyrylova S. I., Komarov F. F.
Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
Cite:
Sachenko, A. V., Kostylev, V. P., Litovchenko, V. G., Popov, V. G., Romanyuk, B. M., Chernenko, V. V., Naseka, V. M., Slusar, T. V., Kyrylova, S. I., Komarov, F. F. (2013). Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer. Ukrainian journal of physics, 58 (2), 142-150. http://jnas.nbuv.gov.ua/article/UJRN-0000688686 | |
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