Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer / Sachenko A. V., Kostylev V. P., Litovchenko V. G., Popov V. G., Romanyuk B. M., Chernenko V. V., Naseka V. M., Slusar T. V., Kyrylova S. I., Komarov F. F. (2013)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000688686
Ukrainian journal of physics   А - 2018 /  Випуск (2013, Vol. 58, № 2)
Sachenko A. V., Kostylev V. P., Litovchenko V. G., Popov V. G., Romanyuk B. M., Chernenko V. V., Naseka V. M., Slusar T. V., Kyrylova S. I., Komarov F. F.
Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
Cite:
Sachenko, A. V., Kostylev, V. P., Litovchenko, V. G., Popov, V. G., Romanyuk, B. M., Chernenko, V. V., Naseka, V. M., Slusar, T. V., Kyrylova, S. I., Komarov, F. F. (2013). Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer. Ukrainian journal of physics, 58 (2), 142-150. http://jnas.nbuv.gov.ua/article/UJRN-0000688686 | |
|
|
PDF