Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures / Litovchenko, N. M., Korbutyak, D. V., Strilchuk, O. M. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000688773
Ukrainian journal of physics   А - 2018 /  Issue (2013, Vol. 58, № 3)
Litovchenko N. M., Korbutyak D. V., Strilchuk O. M.
Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
Cite:
Litovchenko, N. M., Korbutyak, D. V., Strilchuk, O. M. (2013). Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures. Ukrainian journal of physics, 58 (3), 260-267. http://jnas.nbuv.gov.ua/article/UJRN-0000688773 | |
|
|
PDF