Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction / Kozinetz, A. V., Litvinenko, S. V., Skryshevsky, V. A. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000703699
Ukrainian journal of physics   А - 2018 /  Issue (2017, Vol. 62, № 4)
Kozinetz A. V., Litvinenko S. V., Skryshevsky V. A.
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
Cite:
Kozinetz, A. V., Litvinenko, S. V., Skryshevsky, V. A. (2017). Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction. Ukrainian journal of physics, 62 (4), 318-325. http://jnas.nbuv.gov.ua/article/UJRN-0000703699 | |
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