Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs / Kondryuk, D. V., Derevyanchuk, A. V., Kramar, V. M., Kudryavtsev, A. A. (2015)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000706496
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2015, Vol. 18, № 2)
Kondryuk D. V., Derevyanchuk A. V., Kramar V. M., Kudryavtsev A. A.
Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs
Cite:
Kondryuk, D. V., Derevyanchuk, A. V., Kramar, V. M., Kudryavtsev, A. A. (2015). Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (2), 128-133. http://jnas.nbuv.gov.ua/article/UJRN-0000706496 | |
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