інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000706496
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2015, Vol. 18, № 2)
Kondryuk D. V., Derevyanchuk A. V., Kramar V. M., Kudryavtsev A. A.
Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs
Cite:
Kondryuk, D. V., Derevyanchuk, A. V., Kramar, V. M., Kudryavtsev, A. A. (2015). Temperature changes in the exciton absorption band observed in flat double nanoheterostructures GaAs/AlxGa1-xAs. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (2), 128-133. http://jnas.nbuv.gov.ua/article/UJRN-0000706496
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