External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals / Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Rodionov, V. E., Svechnikov, G. S. (2015)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714339
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2015, Vol. 18, № 4)
Vlaskina S. I., Mishinova G. N., Vlaskin V. I., Rodionov V. E., Svechnikov G. S.
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals
Cite:
Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Rodionov, V. E., Svechnikov, G. S. (2015). External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (4), 448-451. http://jnas.nbuv.gov.ua/article/UJRN-0000714339 | |
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