Electrical properties of InSb p-n junctions prepared by diffusion methods / Sukach, A. V., Tetyorkin, V. V., Tkachuk, A. I. (2016)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714380
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2016, Vol. 19, № 3)
Sukach A. V., Tetyorkin V. V., Tkachuk A. I.
Electrical properties of InSb p-n junctions prepared by diffusion methods
Cite:
Sukach, A. V., Tetyorkin, V. V., Tkachuk, A. I. (2016). Electrical properties of InSb p-n junctions prepared by diffusion methods. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (3), 295-298. http://jnas.nbuv.gov.ua/article/UJRN-0000714380 | |
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