Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes / Romanets, P. M., Belyaev, A. E., Sachenko, A. V., Boltovets, N. S., Basanets, V. V., Konakova, R. V., Slipokurov, V. S., Khodin, A. A., Pilipenko, V. A., Shynkarenko, V. V. (2016)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714439
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2016, Vol. 19, № 4)
Romanets P. M., Belyaev A. E., Sachenko A. V., Boltovets N. S., Basanets V. V., Konakova R. V., Slipokurov V. S., Khodin A. A., Pilipenko V. A., Shynkarenko V. V.
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
Cite:
Romanets, P. M., Belyaev, A. E., Sachenko, A. V., Boltovets, N. S., Basanets, V. V., Konakova, R. V., Slipokurov, V. S., Khodin, A. A., Pilipenko, V. A., Shynkarenko, V. V. (2016). Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (4), 366-370. http://jnas.nbuv.gov.ua/article/UJRN-0000714439 | |
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