Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes / Romanets P. M., Belyaev A. E., Sachenko A. V., Boltovets N. S., Basanets V. V., Konakova R. V., Slipokurov V. S., Khodin A. A., Pilipenko V. A., Shynkarenko V. V. (2016)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000714439
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2016, Vol. 19, № 4)
Romanets P. M., Belyaev A. E., Sachenko A. V., Boltovets N. S., Basanets V. V., Konakova R. V., Slipokurov V. S., Khodin A. A., Pilipenko V. A., Shynkarenko V. V.
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
Cite:
Romanets, P. M., Belyaev, A. E., Sachenko, A. V., Boltovets, N. S., Basanets, V. V., Konakova, R. V., Slipokurov, V. S., Khodin, A. A., Pilipenko, V. A., Shynkarenko, V. V. (2016). Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (4), 366-370. http://jnas.nbuv.gov.ua/article/UJRN-0000714439 | |
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