Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley-Read-Hall lifetimes / Sachenko, A. V., Kostylyov, V. P., Vlasiuk, V. M., Korkishko, R. M., Sokolovskyi, I. O., Chernenko, V. V., Evstigneev, M. A. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714481
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2017, Vol. 20, № 1)
Sachenko A. V., Kostylyov V. P., Vlasiuk V. M., Korkishko R. M., Sokolovskyi I. O., Chernenko V. V., Evstigneev M. A.
Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley-Read-Hall lifetimes
Cite:
Sachenko, A. V., Kostylyov, V. P., Vlasiuk, V. M., Korkishko, R. M., Sokolovskyi, I. O., Chernenko, V. V., Evstigneev, M. A. (2017). Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley-Read-Hall lifetimes. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (1), 34-40. http://jnas.nbuv.gov.ua/article/UJRN-0000714481 | |
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