Raman scattering in the process of tin-induced crystallization of amorphous silicon / Neimash, V., Dovbeshko, G., Shepelyavyi, P., Danko, V., Melnyk, V., Isaiev, M., Kuzmich, A. (2016)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000721082
Ukrainian journal of physics   А - 2018 /  Issue (2016, Vol. 61, № 2)
Neimash V., Dovbeshko G., Shepelyavyi P., Danko V., Melnyk V., Isaiev M., Kuzmich A.
Raman scattering in the process of tin-induced crystallization of amorphous silicon
Cite:
Neimash, V., Dovbeshko, G., Shepelyavyi, P., Danko, V., Melnyk, V., Isaiev, M., Kuzmich, A. (2016). Raman scattering in the process of tin-induced crystallization of amorphous silicon. Ukrainian journal of physics, 61 (2), 143-149. http://jnas.nbuv.gov.ua/article/UJRN-0000721082 | |
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