Influence of tin impurity on recombination characteristics in γ-irradiated n-Si / Krasko, M. M. (2012)
Ukrainian

English  Ukrainian Journal of Physics   /     Issue (2012, 57 (11))

Krasko M. M.
Influence of tin impurity on recombination characteristics in γ-irradiated n-Si


Cite:
Krasko, M. M. (2012). Influence of tin impurity on recombination characteristics in γ-irradiated n-Si. Ukrainian Journal of Physics, 57 (11), 1162-1168. http://jnas.nbuv.gov.ua/article/UJRN-0000725248 [In Ukrainian].

 

Institute of Information Technologies of VNLU


+38 (044) 525-36-24
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209