Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses / Kadan, V. M., Indutnyi, I. Z., Danko, V. A., Shepeliavyi, P. Ye., Dmytruk, I. M., Koreniuk, P. I., Blonskyi, I. V. (2013)
Ukrainian

English  Ukrainian Journal of Physics   /     Issue (2013, 58 (1))

Kadan V. M., Indutnyi I. Z., Danko V. A., Shepeliavyi P. Ye., Dmytruk I. M., Koreniuk P. I., Blonskyi I. V.
Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses


Cite:
Kadan, V. M., Indutnyi, I. Z., Danko, V. A., Shepeliavyi, P. Ye., Dmytruk, I. M., Koreniuk, P. I., Blonskyi, I. V. (2013). Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses. Ukrainian Journal of Physics, 58 (1), 20-25. http://jnas.nbuv.gov.ua/article/UJRN-0000725367 [In Ukrainian].

 

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