Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0÷1) films produced by plasma chemical deposition technique / Nadzhafov, B. A., Dadashova, V. V. (2014)
| Ukrainian Journal of Physics / Issue (2014, 59 (10))
Nadzhafov B. A., Dadashova V. V. Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0÷1) films produced by plasma chemical deposition technique
Cite: Nadzhafov, B. A., Dadashova, V. V. (2014). Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0÷1) films produced by plasma chemical deposition technique. Ukrainian Journal of Physics, 59 (10), 959-966. http://jnas.nbuv.gov.ua/article/UJRN-0000726903 [In Russian]. |
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