Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films / Ilchenko, V. V., Kostiukevych, O. M., Lendiel, V. V., Radko, V. I., Goloborodko, N. S. (2016)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000727778
Ukrainian journal of physics   А - 2018 /  Issue (2016, Vol. 61, № 1)
Il'chenko V. V., Kostiukevych O. M., Lendiel V. V., Radko V. I., Goloborodko N. S.
Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
Cite:
Ilchenko, V. V., Kostiukevych, O. M., Lendiel, V. V., Radko, V. I., Goloborodko, N. S. (2016). Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films. Ukrainian journal of physics, 61 (1), 38-43. http://jnas.nbuv.gov.ua/article/UJRN-0000727778 | |
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