Raman scattering in the process of tin-induced crystallization of amorphous silicon / Neimash, V. B., Dovbeshko, H. I., Shepeliavyi, P. Ye., Danko, V. A., Melnyk, V. V., Isaiev, M. V., Kuzmych, A. H. (2016)
Ukrainian

English  Ukrainian Journal of Physics   /     Issue (2016, 61 (2))

Neimash V. B., Dovbeshko H. I., Shepeliavyi P. Ye., Danko V. A., Melnyk V. V., Isaiev M. V., Kuzmych A. H.
Raman scattering in the process of tin-induced crystallization of amorphous silicon


Cite:
Neimash, V. B., Dovbeshko, H. I., Shepeliavyi, P. Ye., Danko, V. A., Melnyk, V. V., Isaiev, M. V., Kuzmych, A. H. (2016). Raman scattering in the process of tin-induced crystallization of amorphous silicon. Ukrainian Journal of Physics, 61 (2), 149-155. http://jnas.nbuv.gov.ua/article/UJRN-0000730790 [In Ukrainian].

 

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