In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection / Kukhtaruk, N. I., Zabudsky, V. V., Shevchik-Shekera, A. V., Mikhailov, N. N., Sizov, F. F. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000741620
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2017, Vol. 20, № 2)
Kukhtaruk N. I., Zabudsky V. V., Shevchik-Shekera A. V., Mikhailov N. N., Sizov F. F.
In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection
Cite:
Kukhtaruk, N. I., Zabudsky, V. V., Shevchik-Shekera, A. V., Mikhailov, N. N., Sizov, F. F. (2017). In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (2), 173-178. http://jnas.nbuv.gov.ua/article/UJRN-0000741620 | |
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