Some new technology aspects for quantum enestor through A3B5 multicomponent nanoepitaxy / Osinsky, V., Masol, I., Lyahova, N., Suhoviy, N., Onachenko, M., Osinsky, A. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000741635
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2017, Vol. 20, № 2)
Osinsky V., Masol I., Lyahova N., Suhoviy N., Onachenko M., Osinsky A.
Some new technology aspects for quantum enestor through A3B5 multicomponent nanoepitaxy
Cite:
Osinsky, V., Masol, I., Lyahova, N., Suhoviy, N., Onachenko, M., Osinsky, A. (2017). Some new technology aspects for quantum enestor through A3B5 multicomponent nanoepitaxy. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (2), 254-258. http://jnas.nbuv.gov.ua/article/UJRN-0000741635 | |
|
|
PDF