The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method / Ievtushenko, A. I., Dusheyko, M. G., Karpyna, V. A., Bykov, O. I., Lytvyn, P. M., Olifan, O. I., Levchenko, V. A., Korchovyi, A. A., Starik, S. P., Tkach, S. V., Kuzmenko, E. F., Lashkarev, G. V. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000778507
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2017, Vol. 20, № 3)
Ievtushenko A. I., Dusheyko M. G., Karpyna V. A., Bykov O. I., Lytvyn P. M., Olifan O. I., Levchenko V. A., Korchovyi A. A., Starik S. P., Tkach S. V., Kuzmenko E. F., Lashkarev G. V.
The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method
Cite:
Ievtushenko, A. I., Dusheyko, M. G., Karpyna, V. A., Bykov, O. I., Lytvyn, P. M., Olifan, O. I., Levchenko, V. A., Korchovyi, A. A., Starik, S. P., Tkach, S. V., Kuzmenko, E. F., Lashkarev, G. V. (2017). The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (3), 314-318. http://jnas.nbuv.gov.ua/article/UJRN-0000778507 | |
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