The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method / Ievtushenko A. I., Dusheyko M. G., Karpyna V. A., Bykov O. I., Lytvyn P. M., Olifan O. I., Levchenko V. A., Korchovyi A. A., Starik S. P., Tkach S. V., Kuzmenko E. F., Lashkarev G. V. (2017)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000778507
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2017, Vol. 20, № 3)
Ievtushenko A. I., Dusheyko M. G., Karpyna V. A., Bykov O. I., Lytvyn P. M., Olifan O. I., Levchenko V. A., Korchovyi A. A., Starik S. P., Tkach S. V., Kuzmenko E. F., Lashkarev G. V.
The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method
Cite:
Ievtushenko, A. I., Dusheyko, M. G., Karpyna, V. A., Bykov, O. I., Lytvyn, P. M., Olifan, O. I., Levchenko, V. A., Korchovyi, A. A., Starik, S. P., Tkach, S. V., Kuzmenko, E. F., Lashkarev, G. V. (2017). The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (3), 314-318. http://jnas.nbuv.gov.ua/article/UJRN-0000778507 | |
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