Nanograin boundaries and silicon carbide photoluminescence / Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Rodionov, V. E., Svechnikov, G. S. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000778513
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2017, Vol. 20, № 3)
Vlaskina S. I., Mishinova G. N., Vlaskin V. I., Rodionov V. E., Svechnikov G. S.
Nanograin boundaries and silicon carbide photoluminescence
Cite:
Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Rodionov, V. E., Svechnikov, G. S. (2017). Nanograin boundaries and silicon carbide photoluminescence. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (3), 344-348. http://jnas.nbuv.gov.ua/article/UJRN-0000778513 | |
|
|
PDF