Photoconductivity relaxation and electron transport in macroporous silicon structures / Karachevtseva, L. A., Onyshchenko, V. F., Sachenko, A. V. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000806887
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2017, Vol. 20, № 4)
Karachevtseva L. A., Onyshchenko V. F., Sachenko A. V.
Photoconductivity relaxation and electron transport in macroporous silicon structures
Cite:
Karachevtseva, L. A., Onyshchenko, V. F., Sachenko, A. V. (2017). Photoconductivity relaxation and electron transport in macroporous silicon structures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (4), 475-480. http://jnas.nbuv.gov.ua/article/UJRN-0000806887 | |
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