Influence of deep-level impurities on the strain electric properties of monocrystalline silicon / Zainabidinov, S., Mamatkarimov, O. O., Khimmatkulov, O., Tursunov, I. G. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000812102
Ukrainian Journal of Physics   А - 2018 /  Issue (2017, Т. 62, № 11)
Zainabidinov S., Mamatkarimov O. O., Khimmatkulov O., Tursunov I. G.
Influence of deep-level impurities on the strain electric properties of monocrystalline silicon
Cite:
Zainabidinov, S., Mamatkarimov, O. O., Khimmatkulov, O., Tursunov, I. G. (2017). Influence of deep-level impurities on the strain electric properties of monocrystalline silicon. Ukrainian Journal of Physics, 62 (11), 951-954. http://jnas.nbuv.gov.ua/article/UJRN-0000812102 | |
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