Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode / Chernyshov, B. V., Holovashchenko, R. V., Derkach, V. M., Tarapov, S. I. (2017)
Ukrainian

English  Radiophysics and Electronics   /     Issue (2017, 22 (4))

Chernyshov B. V., Holovashchenko R. V., Derkach V. M., Tarapov S. I.
Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode


Cite:
Chernyshov, B. V., Holovashchenko, R. V., Derkach, V. M., Tarapov, S. I. (2017). Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode. Radiophysics and Electronics, 22 (4), 49-54. http://jnas.nbuv.gov.ua/article/UJRN-0000813610 [In Ukrainian].

 

Institute of Information Technologies of VNLU


+38 (044) 525-36-24
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209