Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode / Chernyshov, B. V., Holovashchenko, R. V., Derkach, V. M., Tarapov, S. I. (2017)
| Radiophysics and Electronics / Issue (2017, 22 (4))
Chernyshov B. V., Holovashchenko R. V., Derkach V. M., Tarapov S. I. Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode
Cite: Chernyshov, B. V., Holovashchenko, R. V., Derkach, V. M., Tarapov, S. I. (2017). Method of measuring non-equilibrium carriers concentration and their lifetime in a semiconductor using the approach of a photonic crystal with a defect mode. Radiophysics and Electronics, 22 (4), 49-54. http://jnas.nbuv.gov.ua/article/UJRN-0000813610 [In Ukrainian]. |
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