Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content / Trubaieva, O. G., Lalayants, A. I., Chaika, M. A. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000845652
Ukrainian Journal of Physics   А - 2018 /  Issue (2018, Т. 63, № 1)
Trubaieva O. G., Lalayants A. I., Chaika M. A.
Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content
Cite:
Trubaieva, O. G., Lalayants, A. I., Chaika, M. A. (2018). Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content. Ukrainian Journal of Physics, 63 (1), 32-36. http://jnas.nbuv.gov.ua/article/UJRN-0000845652 | |
|
|
PDF