Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content / Trubaieva, O. G., Lalayants, A. I., Chaika, M. A. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000845652 Ukrainian Journal of Physics А - 2018 / Issue (2018, Т. 63, № 1)
Trubaieva O. G., Lalayants A. I., Chaika M. A. Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content
Cite: Trubaieva, O. G., Lalayants, A. I., Chaika, M. A. (2018). Band gap change of bulk ZnSxSe1 – x semiconductors by controlling the sulfur content. Ukrainian Journal of Physics, 63 (1), 32-36. http://jnas.nbuv.gov.ua/article/UJRN-0000845652 | About the state and perspectives of scientific periodicals of the National Academy of Sciences of Ukraine (transcript of report at the meeting of the Presidium of NAS of Ukraine, December 1, 2017) / Yatskiv, Ya. S. (2018)
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| Visnyk of the National Academy of Sciences of Ukraine / Issue (2018, 2)
Yatskiv Ya. S. About the state and perspectives of scientific periodicals of the National Academy of Sciences of Ukraine (transcript of report at the meeting of the Presidium of NAS of Ukraine, December 1, 2017)
Cite: Yatskiv, Ya. S. (2018). About the state and perspectives of scientific periodicals of the National Academy of Sciences of Ukraine (transcript of report at the meeting of the Presidium of NAS of Ukraine, December 1, 2017). Visnyk of the National Academy of Sciences of Ukraine, 2, 28-33. doi: https://doi.org/10.15407/visn2018.02.042 http://jnas.nbuv.gov.ua/article/UJRN-0000847669 [In Ukrainian]. |
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