Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments / Savchenko, D. V., Kalabukhova, E. N., Shanina, B. D., Bagraev, N. T., Klyachkin, L. E., Malyarenko, A. M., Khromov, V. S. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000923036
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 3)
Savchenko D. V., Kalabukhova E. N., Shanina B. D., Bagraev N. T., Klyachkin L. E., Malyarenko A. M., Khromov V. S.
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
Cite:
Savchenko, D. V., Kalabukhova, E. N., Shanina, B. D., Bagraev, N. T., Klyachkin, L. E., Malyarenko, A. M., Khromov, V. S. (2018). Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (3), 249-255. http://jnas.nbuv.gov.ua/article/UJRN-0000923036 | |
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