Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells / Vinoslavskii, M. M., Belevskii, P. A., Poroshin, V. M., Pilipchuk, O. S., Kochelap, V. O. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000923037
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 3)
Vinoslavskii M. M., Belevskii P. A., Poroshin V. M., Pilipchuk O. S., Kochelap V. O.
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
Cite:
Vinoslavskii, M. M., Belevskii, P. A., Poroshin, V. M., Pilipchuk, O. S., Kochelap, V. O. (2018). Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (3), 256-262. http://jnas.nbuv.gov.ua/article/UJRN-0000923037 | |
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