Features of electrochemical processes at the boundary p-GaAs-HF water solution / Pashchenko, G. A., Kravetskyi, M. Yu., Trishchuk, L. I. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000923040
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 3)
Pashchenko G. A., Kravetskyi M. Yu., Trishchuk L. I.
Features of electrochemical processes at the boundary p-GaAs-HF water solution
Cite:
Pashchenko, G. A., Kravetskyi, M. Yu., Trishchuk, L. I. (2018). Features of electrochemical processes at the boundary p-GaAs-HF water solution. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (3), 277-281. http://jnas.nbuv.gov.ua/article/UJRN-0000923040 | |
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