Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields / Syngaivska, G. I., Koroteev, V. V., Kochelap, V. A. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000941353
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 4)
Syngaivska G. I., Koroteev V. V., Kochelap V. A.
Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
Cite:
Syngaivska, G. I., Koroteev, V. V., Kochelap, V. A. (2018). Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 325-335. http://jnas.nbuv.gov.ua/article/UJRN-0000941353 | |
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