Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Bacherikov, Yu. Yu., Konakova, R. V., Okhrimenko, O. B., Berezovska, N. I., Lytvyn, O. S., Kapitanchuk, L. M., Svetlichnyi, A. M. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000941356
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 4)
Bacherikov Yu. Yu., Konakova R. V., Okhrimenko O. B., Berezovska N. I., Lytvyn O. S., Kapitanchuk L. M., Svetlichnyi A. M.
Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
Cite:
Bacherikov, Yu. Yu., Konakova, R. V., Okhrimenko, O. B., Berezovska, N. I., Lytvyn, O. S., Kapitanchuk, L. M., Svetlichnyi, A. M. (2018). Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 360-364. http://jnas.nbuv.gov.ua/article/UJRN-0000941356 | |
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