Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates / Bacherikov Yu. Yu., Konakova R. V., Okhrimenko O. B., Berezovska N. I., Lytvyn O. S., Kapitanchuk L. M., Svetlichnyi A. M. (2018)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000941356
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2018, Vol. 21, № 4)
Bacherikov Yu. Yu., Konakova R. V., Okhrimenko O. B., Berezovska N. I., Lytvyn O. S., Kapitanchuk L. M., Svetlichnyi A. M.
Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates
Cite:
Bacherikov, Yu. Yu., Konakova, R. V., Okhrimenko, O. B., Berezovska, N. I., Lytvyn, O. S., Kapitanchuk, L. M., Svetlichnyi, A. M. (2018). Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 360-364. http://jnas.nbuv.gov.ua/article/UJRN-0000941356 | |
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