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Synergetics of the instability and randomness in the formation of gradient modified semiconductor structures / Yurkovych, N. V., Maryan, M. I., Seben, V. (2018)
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 web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000941357 Semiconductor Physics, Quantum Electronics and Optoelectronics
      А  - 2019  /      Issue (2018,  Vol. 21, № 4) 
 Yurkovych N. V., Mar'yan M. I., Seben V.Synergetics of the instability and randomness in the formation of gradient modified semiconductor structures
 
 
 Cite:Yurkovych, N. V., Maryan, M. I., Seben, V. (2018). Synergetics of the instability and randomness in the formation of gradient modified semiconductor structures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 365-373. http://jnas.nbuv.gov.ua/article/UJRN-0000941357
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