Synergetics of the instability and randomness in the formation of gradient modified semiconductor structures / Yurkovych, N. V., Maryan, M. I., Seben, V. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000941357 Semiconductor Physics, Quantum Electronics and Optoelectronics А - 2019 / Issue (2018, Vol. 21, № 4)
Yurkovych N. V., Mar'yan M. I., Seben V. Synergetics of the instability and randomness in the formation of gradient modified semiconductor structures
Cite: Yurkovych, N. V., Maryan, M. I., Seben, V. (2018). Synergetics of the instability and randomness in the formation of gradient modified semiconductor structures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 365-373. http://jnas.nbuv.gov.ua/article/UJRN-0000941357 |
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