2D semiconductor structures as a basis for new high-tech devices / Korbutyak, D. V., Lytovchenko, V. G., Strikha, M. V. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000941359
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 4)
Korbutyak D. V., Lytovchenko V. G., Strikha M. V.
2D semiconductor structures as a basis for new high-tech devices
Cite:
Korbutyak, D. V., Lytovchenko, V. G., Strikha, M. V. (2018). 2D semiconductor structures as a basis for new high-tech devices. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 380-386. http://jnas.nbuv.gov.ua/article/UJRN-0000941359 | |
|
|
PDF