On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 / Haidar, H. P. (2019)
Ukrainian

English  Reports of the National Academy of Sciences of Ukraine    /     Issue (2019, 5)

Haidar H. P.
On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉


Cite:
Haidar, H. P. (2019). On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉. Reports of the National Academy of Sciences of Ukraine , 5, 67-74. http://jnas.nbuv.gov.ua/article/UJRN-0000996210 [In Ukrainian].

 

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