HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential / Gudina, S. V., Arapov, Yu. G., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Deriushkina, E. V., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A. (2019)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001012121
Low Temperature Physics   А - 2019 /  Issue (2019, Т. 45, № 4)
Gudina S. V., Arapov Yu. G., Neverov V. N., Podgornykh S. M., Popov M. R., Deriushkina E. V., Shelushinina N. G., Yakunin M. V., Mikhailov N. N., Dvoretsky S. A.
HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential
Cite:
Gudina, S. V., Arapov, Yu. G., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Deriushkina, E. V., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A. (2019). HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential. Low Temperature Physics, 45 (4), 476-483. http://jnas.nbuv.gov.ua/article/UJRN-0001012121 | |
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