Current-voltage characteristics of the injection photodiode based on M(In)-nCdS-pSi-M(In) structure / Sapaev, I. B., Sapaev, B., Babajanov, D. B. (2019)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001073622
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2019, Vol. 22, № 2)
Sapaev I. B., Sapaev B., Babajanov D. B.
Current-voltage characteristics of the injection photodiode based on M(In)-nCdS-pSi-M(In) structure
Cite:
Sapaev, I. B., Sapaev, B., Babajanov, D. B. (2019). Current-voltage characteristics of the injection photodiode based on M(In)-nCdS-pSi-M(In) structure. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (2), 188-192. http://jnas.nbuv.gov.ua/article/UJRN-0001073622 | |
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