Influence of microwave radiation on relaxation processes in silicon carbide / Bacherikov, Yu. Yu., Goroneskul, V. Yu., Gudymenko, O. Yo., Kladko, V. P., Kolomys, O. F., Krishchenko, I. M., Okhrimenko, O. B., Strelchuk, V. V. (2020)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001151467
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2020, Vol. 23, № 2)
Bacherikov Yu. Yu., Goroneskul V. Yu., Gudymenko O. Yo., Kladko V. P., Kolomys O. F., Krishchenko I. M., Okhrimenko O. B., Strelchuk V. V.
Influence of microwave radiation on relaxation processes in silicon carbide
Cite:
Bacherikov, Yu. Yu., Goroneskul, V. Yu., Gudymenko, O. Yo., Kladko, V. P., Kolomys, O. F., Krishchenko, I. M., Okhrimenko, O. B., Strelchuk, V. V. (2020). Influence of microwave radiation on relaxation processes in silicon carbide. Semiconductor Physics, Quantum Electronics and Optoelectronics , 23 (2), 175-179. http://jnas.nbuv.gov.ua/article/UJRN-0001151467 | |
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